Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering
- NaMLab gGmbH, Nöthnitzerstr. 64, 01187 Dresden (Germany)
- Westsächsische Hochschule Zwickau, Fachgruppe Nanotechnologie, Dr.-Friedrichs-Ring 2a, 08056 Zwickau (Germany)
- NaMLab gGmbH, Nöthnitzerstr. 64, 01187 Dresden, Germany and TU Dresden, Institut für Halbleiter- und Mikrosystemtechnik (IHM), 01062 Dresden (Germany)
Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 10{sup 4 }cm{sup −1} without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm{sup 3}) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma.
- OSTI ID:
- 22489798
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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