Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
Abstract
This paper reports on aluminum oxide (Al{sub 2}O{sub 3}) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O{sub 2} plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al{sub 2}O{sub 3} films on silicon and indium tin oxide coated polyethylene terephthalate. The properties of the APPALD-grown layers (refractive index, density, etc.) are compared to that deposited by conventional thermal ALD at low pressures. The films films deposited at atmospheric pressure show water vapor transmission rates as low as 5 × 10{sup −5} gm{sup −2}d{sup −1}.
- Authors:
-
- Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-Str. 21, 42119 Wuppertal (Germany)
- Publication Date:
- OSTI Identifier:
- 22489748
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Additional Journal Information:
- Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ALUMINIUM OXIDES; ATMOSPHERIC PRESSURE; DENSITY; DEPOSITS; PLASMA; POLYESTERS; REFRACTIVE INDEX; SILICON; THIN FILMS; TIN OXIDES; WATER VAPOR
Citation Formats
Hoffmann, Lukas, Theirich, Detlef, Hasselmann, Tim, Räupke, André, Schlamm, Daniel, and Riedl, Thomas. Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition. United States: N. p., 2016.
Web. doi:10.1116/1.4935337.
Hoffmann, Lukas, Theirich, Detlef, Hasselmann, Tim, Räupke, André, Schlamm, Daniel, & Riedl, Thomas. Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition. United States. https://doi.org/10.1116/1.4935337
Hoffmann, Lukas, Theirich, Detlef, Hasselmann, Tim, Räupke, André, Schlamm, Daniel, and Riedl, Thomas. 2016.
"Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition". United States. https://doi.org/10.1116/1.4935337.
@article{osti_22489748,
title = {Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition},
author = {Hoffmann, Lukas and Theirich, Detlef and Hasselmann, Tim and Räupke, André and Schlamm, Daniel and Riedl, Thomas},
abstractNote = {This paper reports on aluminum oxide (Al{sub 2}O{sub 3}) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O{sub 2} plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al{sub 2}O{sub 3} films on silicon and indium tin oxide coated polyethylene terephthalate. The properties of the APPALD-grown layers (refractive index, density, etc.) are compared to that deposited by conventional thermal ALD at low pressures. The films films deposited at atmospheric pressure show water vapor transmission rates as low as 5 × 10{sup −5} gm{sup −2}d{sup −1}.},
doi = {10.1116/1.4935337},
url = {https://www.osti.gov/biblio/22489748},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 1,
volume = 34,
place = {United States},
year = {Fri Jan 15 00:00:00 EST 2016},
month = {Fri Jan 15 00:00:00 EST 2016}
}
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