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Title: Mechanistic modeling study on process optimization and precursor utilization with atmospheric spatial atomic layer deposition

Abstract

Spatial atomic layer deposition (SALD) is a promising technology with the aim of combining the advantages of excellent uniformity and conformity of temporal atomic layer deposition (ALD), and an industrial scalable and continuous process. In this manuscript, an experimental and numerical combined model of atmospheric SALD system is presented. To establish the connection between the process parameters and the growth efficiency, a quantitative model on reactant isolation, throughput, and precursor utilization is performed based on the separation gas flow rate, carrier gas flow rate, and precursor mass fraction. The simulation results based on this model show an inverse relation between the precursor usage and the carrier gas flow rate. With the constant carrier gas flow, the relationship of precursor usage and precursor mass fraction follows monotonic function. The precursor concentration, regardless of gas velocity, is the determinant factor of the minimal residual time. The narrow gap between precursor injecting heads and the substrate surface in general SALD system leads to a low Péclet number. In this situation, the gas diffusion act as a leading role in the precursor transport in the small gap rather than the convection. Fluid kinetics from the numerical model is independent of the specific structure, whichmore » is instructive for the SALD geometry design as well as its process optimization.« less

Authors:
; ;  [1];  [2];  [3]
  1. State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)
  2. State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)
  3. State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)
Publication Date:
OSTI Identifier:
22489742
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; CARRIERS; DESIGN; DIFFUSION; EFFICIENCY; FLUIDS; GAS FLOW; OPTIMIZATION; PRECURSOR; SIMULATION; SUBSTRATES; SURFACES

Citation Formats

Deng, Zhang, He, Wenjie, Duan, Chenlong, Chen, Rong, and Shan, Bin. Mechanistic modeling study on process optimization and precursor utilization with atmospheric spatial atomic layer deposition. United States: N. p., 2016. Web. doi:10.1116/1.4932564.
Deng, Zhang, He, Wenjie, Duan, Chenlong, Chen, Rong, & Shan, Bin. Mechanistic modeling study on process optimization and precursor utilization with atmospheric spatial atomic layer deposition. United States. https://doi.org/10.1116/1.4932564
Deng, Zhang, He, Wenjie, Duan, Chenlong, Chen, Rong, and Shan, Bin. 2016. "Mechanistic modeling study on process optimization and precursor utilization with atmospheric spatial atomic layer deposition". United States. https://doi.org/10.1116/1.4932564.
@article{osti_22489742,
title = {Mechanistic modeling study on process optimization and precursor utilization with atmospheric spatial atomic layer deposition},
author = {Deng, Zhang and He, Wenjie and Duan, Chenlong and Chen, Rong and Shan, Bin},
abstractNote = {Spatial atomic layer deposition (SALD) is a promising technology with the aim of combining the advantages of excellent uniformity and conformity of temporal atomic layer deposition (ALD), and an industrial scalable and continuous process. In this manuscript, an experimental and numerical combined model of atmospheric SALD system is presented. To establish the connection between the process parameters and the growth efficiency, a quantitative model on reactant isolation, throughput, and precursor utilization is performed based on the separation gas flow rate, carrier gas flow rate, and precursor mass fraction. The simulation results based on this model show an inverse relation between the precursor usage and the carrier gas flow rate. With the constant carrier gas flow, the relationship of precursor usage and precursor mass fraction follows monotonic function. The precursor concentration, regardless of gas velocity, is the determinant factor of the minimal residual time. The narrow gap between precursor injecting heads and the substrate surface in general SALD system leads to a low Péclet number. In this situation, the gas diffusion act as a leading role in the precursor transport in the small gap rather than the convection. Fluid kinetics from the numerical model is independent of the specific structure, which is instructive for the SALD geometry design as well as its process optimization.},
doi = {10.1116/1.4932564},
url = {https://www.osti.gov/biblio/22489742}, journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 1,
volume = 34,
place = {United States},
year = {Fri Jan 15 00:00:00 EST 2016},
month = {Fri Jan 15 00:00:00 EST 2016}
}