Polarization fluctuation behavior of lanthanum substituted Bi{sub 4}Ti{sub 3}O{sub 12} thin films
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China)
Polarization fluctuation behavior of lanthanum substituted Bi{sub 4}Ti{sub 3}O{sub 12} (Bi{sub 4−x}La{sub x}Ti{sub 3}O{sub 12}, BLT) ferroelectric thin films has been examined. Remnant polarization exhibits an initial increase (P{sub up}, 1–10{sup 6} cycles) and a subsequent decrease (P{sub down}, 10{sup 6}–10{sup 9} cycles) with switching cycles, whereas the dielectric constant exhibits a continuous decrease. By careful investigations on the effect of switching frequency and annealing atmosphere on the polarization fluctuation characteristics, we propose that this polarization fluctuation characteristic of BLT films is attributed to the competition between domain pinning and passive layer growing effect, due to the redistribution of oxygen vacancy related defect under external applied field. P{sub up} behavior is dominated by the unpinning of pinned domain, while P{sub down} behavior is dominated by the reduction of applied field on BLT bulk layer, due to the growing of the passive layer between BLT and Pt electrode. By assuming the dielectric constant and initial thickness of passive layer, the passive layer was estimated to be about 2–5 times thicker than the initial state after 10{sup 9} cycling.
- OSTI ID:
- 22489460
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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