Few-layer SnSe{sub 2} transistors with high on/off ratios
- Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190 (China)
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
We report few-layer SnSe{sub 2} field effect transistors (FETs) with high current on/off ratios. By trying different gate configurations, 300 nm SiO{sub 2} and 70 nm HfO{sub 2} as back gate only and 70 nm HfO{sub 2} as back gate combined with a top capping layer of polymer electrolyte, few-layer SnSe{sub 2} FET with a current on/off ratio of 10{sup 4} can be obtained. This provides a reliable solution for electrically modulating quasi-two-dimensional materials with high electron density (over 10{sup 13} cm{sup −2}) for field-effect transistor applications.
- OSTI ID:
- 22489423
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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