Determination of deep trapping lifetime in organic semiconductors using impedance spectroscopy
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan)
A method for determining deep trapping lifetime in semiconductors using an impedance spectroscopy is proposed. A unique feature of the method is the simultaneous determination of the drift mobility and deep trapping lifetime in thin-film electronic devices. The validity of the proposed method is examined by numerical calculation. Simultaneous determinations of the drift mobility and deep trapping lifetime using this method are demonstrated in prototypical hole transporting organic semiconductors.
- OSTI ID:
- 22489420
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe
Determination of carrier lifetime and mobility in colloidal quantum dot films via impedance spectroscopy
Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors
Journal Article
·
Fri Nov 21 00:00:00 EST 2014
· Journal of Applied Physics
·
OSTI ID:22489420
Determination of carrier lifetime and mobility in colloidal quantum dot films via impedance spectroscopy
Journal Article
·
Mon Feb 10 00:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:22489420
+2 more
Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors
Technical Report
·
Wed Dec 10 00:00:00 EST 2014
·
OSTI ID:22489420