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Title: Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

Abstract

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thick and relaxed but defective InGaN for solar cell applications.

Authors:
; ;  [1];  [1]
  1. Center for SMART Green Innovation Research, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)
Publication Date:
OSTI Identifier:
22489362
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM NITRIDES; LEAKAGE CURRENT; LEAKS; MOLECULAR BEAM EPITAXY; PASSIVATION; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; SOLAR CELLS

Citation Formats

Wang, Ke, Imai, Daichi, Kusakabe, Kazuhide, Yoshikawa, Akihiko, and Department of Information and Communication Engineering, Graduate School of Engineering, Kogakuin University, Nakano-cho, Hachioji, Tokyo 2665-1. Proposal of leak path passivation for InGaN solar cells to reduce the leakage current. United States: N. p., 2016. Web. doi:10.1063/1.4940970.
Wang, Ke, Imai, Daichi, Kusakabe, Kazuhide, Yoshikawa, Akihiko, & Department of Information and Communication Engineering, Graduate School of Engineering, Kogakuin University, Nakano-cho, Hachioji, Tokyo 2665-1. Proposal of leak path passivation for InGaN solar cells to reduce the leakage current. United States. https://doi.org/10.1063/1.4940970
Wang, Ke, Imai, Daichi, Kusakabe, Kazuhide, Yoshikawa, Akihiko, and Department of Information and Communication Engineering, Graduate School of Engineering, Kogakuin University, Nakano-cho, Hachioji, Tokyo 2665-1. 2016. "Proposal of leak path passivation for InGaN solar cells to reduce the leakage current". United States. https://doi.org/10.1063/1.4940970.
@article{osti_22489362,
title = {Proposal of leak path passivation for InGaN solar cells to reduce the leakage current},
author = {Wang, Ke and Imai, Daichi and Kusakabe, Kazuhide and Yoshikawa, Akihiko and Department of Information and Communication Engineering, Graduate School of Engineering, Kogakuin University, Nakano-cho, Hachioji, Tokyo 2665-1},
abstractNote = {We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thick and relaxed but defective InGaN for solar cell applications.},
doi = {10.1063/1.4940970},
url = {https://www.osti.gov/biblio/22489362}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 108,
place = {United States},
year = {Mon Jan 25 00:00:00 EST 2016},
month = {Mon Jan 25 00:00:00 EST 2016}
}