InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors
- Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433 (United States)
- Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)
- California NanoSystems Institute, University of California, Los Angeles, California 90095 (United States)
Investigation of growth and properties of InGaAs/InAsSb strained layer superlattices, identified as ternary strained layer superlattices (ternary SLSs), is reported. The material space for the antimony-based SLS detector development is expanded beyond InAs/InAsSb and InAs/(In)GaSb by incorporating Ga into InAs. It was found that this not only provides support for strain compensation but also enhances the infrared (IR) absorption properties. A unique InGaAs/InAsSb SLS exists when the conduction band of InGaAs aligns with that of InAsSb. The bandgap of this specific InGaAs/InAsSb SLS can then be tuned by adjusting the thickness of both constituents. Due to the enhanced electron-hole wavefunction overlap, a significant increase in the absorption coefficient was theoretically predicted for ternary SLS as compared to current state-of-the-art InAs/InAsSb SLS structures, and an approximately 30%–35% increase in the absorption coefficient was experimentally observed. All the samples examined in this work were designed to have the same bandgap of approximately 0.240 eV (5.6 μm) at 150 K.
- OSTI ID:
- 22489286
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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