Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed in situ synchrotron X-ray diffraction
- Quantum Beam Science Center, Japan Atomic Energy Agency, 1-1-1 Koto, Sayo, Hyogo 679-5148 (Japan)
- Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama 790-8577 (Japan)
We report an anomalous lattice deformation of GaN layers grown on SiC(0001) by molecular beam epitaxy. The evolution of the lattice parameters during the growth of the GaN layers was measured by in situ synchrotron X-ray diffraction. The lattice parameters in the directions parallel and normal to the surface showed significant deviation from the elastic strains expected for lattice-mismatched films on substrates up to a thickness of 10 nm. The observed lattice deformation was well explained by the incorporation of hydrostatic strains due to point defects. The results indicate that the control of point defects in the initial stage of growth is important for fabricating GaN-based optoelectronic devices.
- OSTI ID:
- 22489240
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy
Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayers grown on 6H-SiC (0001) by molecular-beam epitaxy
Bound exciton energies, biaxial strains, and defect microstructures in GaN/AlN/6H-SiC(0001) heterostructures
Journal Article
·
Mon Jun 15 00:00:00 EDT 2015
· AIP Advances
·
OSTI ID:22489240
Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayers grown on 6H-SiC (0001) by molecular-beam epitaxy
Journal Article
·
Sat Jan 01 00:00:00 EST 2005
· Journal of Applied Physics
·
OSTI ID:22489240
Bound exciton energies, biaxial strains, and defect microstructures in GaN/AlN/6H-SiC(0001) heterostructures
Book
·
Wed Dec 31 00:00:00 EST 1997
·
OSTI ID:22489240
+4 more