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Title: Micromechanical measurement of beating patterns in the quantum oscillatory chemical potential of InGaAs quantum wells due to spin-orbit coupling

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4929840· OSTI ID:22489199
;  [1]; ;  [2];  [3]
  1. Institut für Nanostruktur- und Festkörperphysik, Universität Hamburg, Jungiusstr. 11, D-20355 Hamburg (Germany)
  2. Peter Grünberg Institut (PGI-9) and JARA-FIT Jülich-Aachen Research Alliance, Forschungszentrum Jülich, D-52425 Jülich (Germany)
  3. Lehrstuhl für Physik funktionaler Schichtsysteme, Physik Department, Technische Universität München, James-Franck-Strasse 1, D-85748 Garching b. München (Germany)

The quantum oscillatory magnetization M(B) and chemical potential μ(B) of a two-dimensional (2D) electron system provide important and complementary information about its ground state energy at low temperature T. We developed a technique that provides both quantities in the same cool-down process via a decoupled static operation and resonant excitation of a micromechanical cantilever. On InGaAs/InP heterostructures, we observed beating patterns in both M(B) and μ(B) attributed to spin-orbit interaction. A significantly enhanced sensitivity in μ enabled us to extract Rashba and Dresselhaus parameters with high accuracy. The technique is powerful for detailed investigations on the electronic properties of 2D materials.

OSTI ID:
22489199
Journal Information:
Applied Physics Letters, Vol. 107, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English