Suppression of dark current through barrier engineer for solution-processed colloidal quantum-dots infrared photodetectors
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
- China Tianchen Engineering Corporation, Tianjin 300400 (China)
- Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093 (China)
- State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)
In an attempt to suppress the dark current, the barrier layer engineer for solution-processed PbSe colloidal quantum-dot (CQD) photodetectors has been investigated in the present study. It was found that the dark current can be significantly suppressed by implementing two types of carrier blocking layers, namely, hole blocking layer and electron blocking layer, sandwiched in between two active PbSe CQD layers. Meanwhile no adverse impact has been observed for the photo current. Our study suggests that this improvement resides on the transport pathway created via carrier recombination at intermediate layer, which provides wide implications for the suppression of dark current for infrared photodetectors.
- OSTI ID:
- 22489191
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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