Dielectric response of metal/SrTiO{sub 3}/two-dimensional electron liquid heterostructures

Journal Article · Mon Aug 17 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4928751· OSTI ID:22489120

Mikheev, Evgeny; Raghavan, Santosh; Stemmer, Susanne ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

Maximizing the effective dielectric constant of the gate dielectric stack is important for electrostatically controlling high carrier densities inherent to strongly correlated materials. SrTiO{sub 3} is uniquely suited for this purpose, given its extremely high dielectric constant, which can reach 10{sup 4}. Here, we present a systematic study of the thickness dependence of the dielectric response and leakage of SrTiO{sub 3} that is incorporated into a vertical structure on a high-carrier-density two-dimensional electron liquid (2DEL). A simple model can be used to interpret the data. The results show a need for improved interface control in the design of metal/SrTiO{sub 3}/2DEL devices.

• OSTI ID: 22489120
• Journal Information: Applied Physics Letters, Vol. 107, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIER DENSITY
DESIGN
DIELECTRIC MATERIALS
INTERFACES
LIQUIDS
METALS
PERMITTIVITY
STRONTIUM TITANATES
THICKNESS
TWO-DIMENSIONAL SYSTEMS