Ion implantation for manufacturing bent and periodically bent crystals

Journal Article · Mon Aug 10 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4928553· OSTI ID:22489102

Bellucci, Valerio; Camattari, Riccardo; Guidi, Vincenzo; Mazzolari, Andrea; Paternò, Gianfranco ^[1]; Mattei, Giovanni; Scian, Carlo ^[2]; Lanzoni, Luca ^[3]

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1. Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1/c, 44122 Ferrara, Italy and INFN, Section of Ferrara (Italy)
2. Department of Physics and Astronomy Galileo Galilei, University of Padova, Via Marzolo 8, 35131 Padova (Italy)
3. Dipertimento di Economia e Tecnologia, Università degli Studi della Repubblica di San Marino, Salita alla Rocca, 44, 47890 San Marino Città (San Marino)

Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.

• OSTI ID: 22489102
• Journal Information: Applied Physics Letters, Vol. 107, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BEAMS
DISLOCATIONS
EUROPEAN SYNCHROTRON RADIATION FACILITY
GEOMETRY
ION IMPLANTATION
LAYERS
MANUFACTURING
MONOCRYSTALS
PERIODICITY
SYNCHROTRON RADIATION
TRANSMISSION
X RADIATION
X-RAY DIFFRACTION