A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

Journal Article · Mon Aug 10 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4928589· OSTI ID:22489100

Purches, W. E. ^[1]; Rossi, A.; Zhao, R. ^[2]; Kafanov, S.; Duty, T. L. ^[1]; Dzurak, A. S. ^[2]; Rogge, S.

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1. School of Physics, UNSW, Sydney 2052 (Australia)
2. School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia)

Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

• OSTI ID: 22489100
• Journal Information: Applied Physics Letters, Vol. 107, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRODES
FABRICATION
INTERFACES
METALS
MOSFET
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SUPERCONDUCTING DEVICES