skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

Abstract

This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG concentration, lower electron mobility, lower saturation current, and lower peak transconductance, but it has a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain the accurate capture cross section of trap states. By frequency dependent capacitance and conductance measurements, the trap state density of (1.98–2.56) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.37–0.44) eV in the thin sample, while the trap state density of (2.3–2.92) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.33–0.38) eV in the thick one. It indicates that the trap states in the thin sample are deeper than those in the thick one.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [1]
  1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)
  2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071 (China)
Publication Date:
OSTI Identifier:
22489099
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON MOBILITY; FLUORINE; GALLIUM NITRIDES; LAYERS; THICKNESS; TRANSISTORS; TRAPS

Citation Formats

He, Yunlong, Wang, Chong, Li, Xiangdong, Zhao, Shenglei, Mi, Minhan, Pei, Jiuqing, Zhang, Jincheng, Hao, Yue, Li, Peixian, Ma, Xiaohua, and School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071. Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses. United States: N. p., 2015. Web. doi:10.1063/1.4928477.
He, Yunlong, Wang, Chong, Li, Xiangdong, Zhao, Shenglei, Mi, Minhan, Pei, Jiuqing, Zhang, Jincheng, Hao, Yue, Li, Peixian, Ma, Xiaohua, & School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071. Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses. United States. https://doi.org/10.1063/1.4928477
He, Yunlong, Wang, Chong, Li, Xiangdong, Zhao, Shenglei, Mi, Minhan, Pei, Jiuqing, Zhang, Jincheng, Hao, Yue, Li, Peixian, Ma, Xiaohua, and School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071. 2015. "Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses". United States. https://doi.org/10.1063/1.4928477.
@article{osti_22489099,
title = {Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses},
author = {He, Yunlong and Wang, Chong and Li, Xiangdong and Zhao, Shenglei and Mi, Minhan and Pei, Jiuqing and Zhang, Jincheng and Hao, Yue and Li, Peixian and Ma, Xiaohua and School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071},
abstractNote = {This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG concentration, lower electron mobility, lower saturation current, and lower peak transconductance, but it has a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain the accurate capture cross section of trap states. By frequency dependent capacitance and conductance measurements, the trap state density of (1.98–2.56) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.37–0.44) eV in the thin sample, while the trap state density of (2.3–2.92) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.33–0.38) eV in the thick one. It indicates that the trap states in the thin sample are deeper than those in the thick one.},
doi = {10.1063/1.4928477},
url = {https://www.osti.gov/biblio/22489099}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 6,
volume = 107,
place = {United States},
year = {Mon Aug 10 00:00:00 EDT 2015},
month = {Mon Aug 10 00:00:00 EDT 2015}
}