AlGaAs converters and arrays for laser power beaming

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4931562· OSTI ID:22489020

Khvostikov, Vladimir; Sorokina, Svetlana; Potapovich, Nataliia; Khvostikova, Olga; Shvarts, Maxim; Timoshina, Nailya; Andreev, Viacheslav ^[1]

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1. Ioffe Institute, 26 Polytechnicheskaya, St.Petersburg, 194021 (Russian Federation)

This study reports on the development of AlGaAs/GaAs-based laser power photovoltaic (PV) converters fabricated by LPE. The monochromatic (λ = 809 nm) conversion efficiency up to 58% is measured for cells with p-n junction in Al{sub 0.07}Ga{sub 0.93}As and low (x = 0.25-0.3) Al concentration ‘window’. Modules, which have converters of low and high power laser radiation and the voltage of 4V, have been designed and fabricated. Comparison of output parameters measured at two different conditions (i.e., under flash lamp and laser beam) has been performed.

• OSTI ID: 22489020
• Journal Information: AIP Conference Proceedings, Vol. 1679, Issue 1; Conference: CPV-11: 11. international conference on conventrator photovoltaictaic systems, Aix-les-Bains (France), 13-15 Apr 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ALUMINIUM ARSENIDES
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DESIGN
EFFICIENCY
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
LASER POWER TRANSMISSION
LASER RADIATION
LIGHT BULBS
LIQUID PHASE EPITAXY
MONOCHROMATIC RADIATION
PHOTOVOLTAIC CONVERSION
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS