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Title: Investigation of new approaches for InGaN growth with high indium content for CPV application

Abstract

We propose to use two new approaches that may overcome the issues of phase separation and high dislocation density in InGaN-based PIN solar cells. The first approach consists in the growth of a thick multi-layered InGaN/GaN absorber. The periodical insertion of the thin GaN interlayers should absorb the In excess and relieve compressive strain. The InGaN layers need to be thin enough to remain fully strained and without phase separation. The second approach consists in the growth of InGaN nano-structures for the achievement of high In content thick InGaN layers. It allows the elimination of the preexisting dislocations in the underlying template. It also allows strain relaxation of InGaN layers without any dislocations, leading to higher In incorporation and reduced piezo-electric effect. The two approaches lead to structural, morphological, and luminescence properties that are significantly improved when compared to those of thick InGaN layers. Corresponding full PIN structures have been realized by growing a p-type GaN layer on the top the half PIN structures. External quantum efficiency, electro-luminescence, and photo-current characterizations have been carried out on the different structures and reveal an enhancement of the performances of the InGaN PIN PV cells when the thick InGaN layer is replaced bymore » either InGaN/GaN multi-layered or InGaN nanorod layer.« less

Authors:
; ; ;  [1]; ;  [2]; ; ; ;  [3]; ;  [4];  [1]
  1. CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France)
  2. Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France)
  3. CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France)
  4. CNRS, ICUBE - Université de Strasbourg (France)
Publication Date:
OSTI Identifier:
22489008
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1679; Journal Issue: 1; Conference: CPV-11: 11. international conference on conventrator photovoltaictaic systems, Aix-les-Bains (France), 13-15 Apr 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; COMPARATIVE EVALUATIONS; DISLOCATIONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LAYERS; LUMINESCENCE; NANOSTRUCTURES; PERFORMANCE; PHOTOCURRENTS; P-TYPE CONDUCTORS; QUANTUM EFFICIENCY; RELAXATION; SOLAR CELLS; STRAINS

Citation Formats

Arif, Muhammad, Salvestrini, Jean Paul, E-mail: salvestr@metz.supelec.fr, Université de Lorraine & CentraleSupelec, LMOPS, EA4423, 57070 Metz, Sundaram, Suresh, Streque, Jérémy, Gmili, Youssef El, Puybaret, Renaud, Voss, Paul L., Belahsene, Sofiane, Ramdane, Abderahim, Martinez, Anthony, Patriarche, Gilles, Fix, Thomas, Slaoui, Abdelillah, Ougazzaden, Abdallah, and Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz. Investigation of new approaches for InGaN growth with high indium content for CPV application. United States: N. p., 2015. Web. doi:10.1063/1.4931512.
Arif, Muhammad, Salvestrini, Jean Paul, E-mail: salvestr@metz.supelec.fr, Université de Lorraine & CentraleSupelec, LMOPS, EA4423, 57070 Metz, Sundaram, Suresh, Streque, Jérémy, Gmili, Youssef El, Puybaret, Renaud, Voss, Paul L., Belahsene, Sofiane, Ramdane, Abderahim, Martinez, Anthony, Patriarche, Gilles, Fix, Thomas, Slaoui, Abdelillah, Ougazzaden, Abdallah, & Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz. Investigation of new approaches for InGaN growth with high indium content for CPV application. United States. https://doi.org/10.1063/1.4931512
Arif, Muhammad, Salvestrini, Jean Paul, E-mail: salvestr@metz.supelec.fr, Université de Lorraine & CentraleSupelec, LMOPS, EA4423, 57070 Metz, Sundaram, Suresh, Streque, Jérémy, Gmili, Youssef El, Puybaret, Renaud, Voss, Paul L., Belahsene, Sofiane, Ramdane, Abderahim, Martinez, Anthony, Patriarche, Gilles, Fix, Thomas, Slaoui, Abdelillah, Ougazzaden, Abdallah, and Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz. 2015. "Investigation of new approaches for InGaN growth with high indium content for CPV application". United States. https://doi.org/10.1063/1.4931512.
@article{osti_22489008,
title = {Investigation of new approaches for InGaN growth with high indium content for CPV application},
author = {Arif, Muhammad and Salvestrini, Jean Paul, E-mail: salvestr@metz.supelec.fr and Université de Lorraine & CentraleSupelec, LMOPS, EA4423, 57070 Metz and Sundaram, Suresh and Streque, Jérémy and Gmili, Youssef El and Puybaret, Renaud and Voss, Paul L. and Belahsene, Sofiane and Ramdane, Abderahim and Martinez, Anthony and Patriarche, Gilles and Fix, Thomas and Slaoui, Abdelillah and Ougazzaden, Abdallah and Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz},
abstractNote = {We propose to use two new approaches that may overcome the issues of phase separation and high dislocation density in InGaN-based PIN solar cells. The first approach consists in the growth of a thick multi-layered InGaN/GaN absorber. The periodical insertion of the thin GaN interlayers should absorb the In excess and relieve compressive strain. The InGaN layers need to be thin enough to remain fully strained and without phase separation. The second approach consists in the growth of InGaN nano-structures for the achievement of high In content thick InGaN layers. It allows the elimination of the preexisting dislocations in the underlying template. It also allows strain relaxation of InGaN layers without any dislocations, leading to higher In incorporation and reduced piezo-electric effect. The two approaches lead to structural, morphological, and luminescence properties that are significantly improved when compared to those of thick InGaN layers. Corresponding full PIN structures have been realized by growing a p-type GaN layer on the top the half PIN structures. External quantum efficiency, electro-luminescence, and photo-current characterizations have been carried out on the different structures and reveal an enhancement of the performances of the InGaN PIN PV cells when the thick InGaN layer is replaced by either InGaN/GaN multi-layered or InGaN nanorod layer.},
doi = {10.1063/1.4931512},
url = {https://www.osti.gov/biblio/22489008}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1679,
place = {United States},
year = {Mon Sep 28 00:00:00 EDT 2015},
month = {Mon Sep 28 00:00:00 EDT 2015}
}