Effect of annealing on the properties of nanocrystalline CuInSSe thin films deposited by spray pyrolysis
- School of Studies in Physics, Jiwaji University, Gwalior (MP), India-474011 (India)
The effect of annealing CuInSSe thin films, which were grown on glass substrates using the spray pyrolysis technique from spray solutions having S/Se ionic ratio 0.6, were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical transmission measurements. The CuInSSe films were co-deposited from an aqueous solution containing CuCl{sub 2}, InCl{sub 3}, thiourea and SeO{sub 2}. EDC was used as a complexing agent and films were deposited at the constant temperature 300°C. Post annealing (at 350°C) was used to improve the structural, morphological and optical properties of CuInSSe thin films. From the results, it is found that the films are single phase, p-type in conductivity having the chalcopyrite structure. From the Scherrer formula the average size of the films was found to be in the range (15-28) nm. Optical studies show that the optical band gap value increases slightly from 1.35 eV to 1.37 eV with annealing for films grown from spray solutions having S/Se ionic ratio 0.6.
- OSTI ID:
- 22488860
- Journal Information:
- AIP Conference Proceedings, Vol. 1675, Issue 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANNEALING
AQUEOUS SOLUTIONS
CHALCOPYRITE
CHELATING AGENTS
COPPER CHLORIDES
COPPER SULFIDES
CRYSTALS
EV RANGE
INDIUM CHLORIDES
INDIUM SELENIDES
NANOSTRUCTURES
OPTICAL PROPERTIES
PYROLYSIS
SCANNING ELECTRON MICROSCOPY
SELENIUM OXIDES
SUBSTRATES
THIN FILMS
THIOUREA
X-RAY DIFFRACTION