Optical gain in type–II InGaAs/GaAsSb quantum well nano-heterostructure

Journal Article · Fri Aug 28 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4929254· OSTI ID:22488846

Nirmal, H. K.; Yadav, Nisha; Lal, Pyare

In this paper, we have simulated optical gain in type-II InGaAs/GaAsSb quantum well based nano-scale heterostructure. In order to simulate the optical gain, the heterostructure has been modeled with the help of six band k.p method. The 6 × 6 diagonalized k.p Hamiltonian has been solved to evaluate the valence sub-bands (i.e. light and heavy hole energies); and then optical matrix elements and optical gain within TE (Transverse Electric) mode has been calculated. The results obtained suggest that peak optical gain in the heterostructure can be achieved at the lasing wavelength ~ 1.95 µm (SWIR region) and at corresponding energy ~ 0.635 eV.

• OSTI ID: 22488846
• Journal Information: AIP Conference Proceedings, Vol. 1675, Issue 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
EV RANGE
GAIN
GALLIUM ARSENIDES
HAMILTONIANS
HETEROJUNCTIONS
HOLES
INDIUM ARSENIDES
QUANTUM WELLS
VALENCE
VISIBLE RADIATION