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Title: Spin-current injection and detection in κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4922007· OSTI ID:22488596
 [1];  [2];  [3];  [2];  [1]
  1. WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  2. Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science, Okazaki 444-8585 (Japan)
  3. Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Aoba-ku, Sendai 980-8577 (Japan)

Spin-current injection into an organic semiconductor κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by ferromagnetic or spin-wave resonance, a voltage signal was found to appear in the κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br film. Magnetic-field-angle dependence measurements indicate that the voltage signal is governed by the inverse spin Hall effect in κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br. We found that the voltage signal in the κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br/YIG system is critically suppressed around 80 K, around which magnetic and/or glass transitions occur, implying that the efficiency of the spin-current injection is suppressed by fluctuations which critically enhanced near the transitions.

OSTI ID:
22488596
Journal Information:
AIP Advances, Vol. 5, Issue 5; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English