Determination of band offsets at the Al:ZnO/Cu{sub 2}SnS{sub 3} interface using X-ray photoelectron spectroscopy
The Al:ZnO/Cu{sub 2}SnS{sub 3} semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu{sub 2}SnS{sub 3} heterojunction was studied using X-ray photoelectron spectroscopy technique. From the measurement of the core level energies and valence band maximum of the constituent elements, the valence band offset was calculated to be −1.1 ± 0.24 eV and the conduction band offset was 0.9 ± 0.34 eV. The band alignment at the heterojunction was found to be of type-I. The study of Al:ZnO/Cu{sub 2}SnS{sub 3} heterojunction is useful for solar cell applications.
- OSTI ID:
- 22488545
- Journal Information:
- AIP Advances, Vol. 5, Issue 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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