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Title: Stoichiometric controlling of boroncarbonitride thin films with using BN-C dual-targets

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4918684· OSTI ID:22488536
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  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China)

High carbon-rich boroncarbonitride thin films have been grown by pulsed laser deposition (PLD) technique with using BN-C dual-targets. Fourier-transform infrared (FTIR) spectroscopy results presented B-N, B-C and C-N bonds, indicating the as-deposited thin films were new ternary compounds. B-N, B-C and C-N bonding structures were also detected by X-ray photoelectron spectroscopy (XPS), and carbon content fell into a large range of 45.8 to 85.9%. The films exhibited good thermalstability in vacuum, whereas were oxidized at 600 {sup o}C in air.

OSTI ID:
22488536
Journal Information:
AIP Advances, Vol. 5, Issue 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English