skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

Abstract

Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO{sub 2} gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active semiconducting layer grown on a modified SiO{sub 2} dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET) characteristics are independent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.

Authors:
; ;  [1]; ;  [2];  [1]
  1. WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)
  2. Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578 (Japan)
Publication Date:
OSTI Identifier:
22486392
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AIR; CARRIERS; CONTROL; CONVERSION; DIELECTRIC MATERIALS; ELECTRIC CONTACTS; ELECTRODES; FIELD EFFECT TRANSISTORS; HOLES; LAYERS; METALS; METHACRYLIC ACID ESTERS; MODIFICATIONS; MOLECULES; SILICON OXIDES; SURFACES; THIN FILMS; VISIBLE RADIATION; WORK FUNCTIONS

Citation Formats

Kanagasekaran, Thangavel, Ikeda, Susumu, Kumashiro, Ryotaro, Shimotani, Hidekazu, Shang, Hui, Tanigaki, Katsumi, and Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578. Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors. United States: N. p., 2015. Web. doi:10.1063/1.4927651.
Kanagasekaran, Thangavel, Ikeda, Susumu, Kumashiro, Ryotaro, Shimotani, Hidekazu, Shang, Hui, Tanigaki, Katsumi, & Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578. Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors. United States. https://doi.org/10.1063/1.4927651
Kanagasekaran, Thangavel, Ikeda, Susumu, Kumashiro, Ryotaro, Shimotani, Hidekazu, Shang, Hui, Tanigaki, Katsumi, and Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578. 2015. "Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors". United States. https://doi.org/10.1063/1.4927651.
@article{osti_22486392,
title = {Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors},
author = {Kanagasekaran, Thangavel and Ikeda, Susumu and Kumashiro, Ryotaro and Shimotani, Hidekazu and Shang, Hui and Tanigaki, Katsumi and Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578},
abstractNote = {Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO{sub 2} gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active semiconducting layer grown on a modified SiO{sub 2} dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET) characteristics are independent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.},
doi = {10.1063/1.4927651},
url = {https://www.osti.gov/biblio/22486392}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 107,
place = {United States},
year = {Mon Jul 27 00:00:00 EDT 2015},
month = {Mon Jul 27 00:00:00 EDT 2015}
}