Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

Journal Article · Mon Jul 20 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4927054· OSTI ID:22486354

Seo, M.; Kim, H.; Kim, Y. H.; Yun, H.; McAllister, K.; Na, J.; Kim, G. T. ^[1]; Lee, B. J.; Kim, J. J.; Jeong, G. H. ^[2]; Lee, I.; Kim, K. S. ^[3]

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1. School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
2. Department of Nano Applied Engineering, Kangwon National University, Kangwon-do 200-701 (Korea, Republic of)
3. Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

• OSTI ID: 22486354
• Journal Information: Applied Physics Letters, Vol. 107, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARBON NANOTUBES
ELECTRICAL PROPERTIES
ELECTRODES
EQUIPMENT
FABRICATION
GRAPHENE
LAYERS
PERFORMANCE
RELIABILITY
SCHOTTKY BARRIER DIODES
TRANSISTORS