Thermal transport across few-layer boron nitride encased by silica
- Department of Mechanical Engineering, University of Minnesota, 111 Church Street SE, Minneapolis, Minnesota 55455 (United States)
- Department of Materials Science and Engineering, University of Texas at Arlington, 501 West First St., Arlington, Texas 76019 (United States)
Two dimensional hexagonal boron nitride (h-BN) attracted attention for use in applications. Using equilibrium molecular dynamics, we examine the phonon transport in few-layer h-BN encased by silica (SiO{sub 2}). We report large interfacial thermal resistances, of about 2.2 × 10{sup −8} m{sup 2} K W{sup −1}, which are not sensitive to the number of h-BN layers or the SiO{sub 2} crystallinity. The h-BN/SiO{sub 2} superlattices exhibit ultra-low thermal conductivities across layers, as low as 0.3 W/m K. They are structurally stable up to 2000 K while retaining the low-thermal conductivity attributes. Our simulations indicate that incorporation of h-BN layers and nanoparticles in silica could establish thermal barriers and heat spreading paths, useful for high performance coatings and electronic device applications.
- OSTI ID:
- 22486329
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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