A stochastic simulation method for the assessment of resistive random access memory retention reliability

Journal Article · Mon Dec 21 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4938210· OSTI ID:22486286

Berco, Dan; Tseng, Tseung-Yuen ^[1]

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1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan (China)

This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO{sub 2} device with a double layer ZnO/ZrO{sub 2} one, and obtain results which are in good agreement with experimental data.

• OSTI ID: 22486286
• Journal Information: Applied Physics Letters, Vol. 107, Issue 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALGORITHMS
FREE ENTHALPY
METALS
MONTE CARLO METHOD
RELIABILITY
STOCHASTIC PROCESSES
ZINC OXIDES
ZIRCONIUM OXIDES