A stochastic simulation method for the assessment of resistive random access memory retention reliability
- Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan (China)
This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO{sub 2} device with a double layer ZnO/ZrO{sub 2} one, and obtain results which are in good agreement with experimental data.
- OSTI ID:
- 22486286
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory
Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory
Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method
Journal Article
·
Mon Feb 04 00:00:00 EST 2013
· Applied Physics Letters
·
OSTI ID:22486286
+8 more
Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory
Journal Article
·
Mon Mar 21 00:00:00 EDT 2016
· Applied Physics Letters
·
OSTI ID:22486286
Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method
Journal Article
·
Mon Apr 20 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22486286
+1 more