Dopant activation in Sn-doped Ga{sub 2}O{sub 3} investigated by X-ray absorption spectroscopy

Brandt, R. E.; Jaramillo, R.; Lim, K.; Schelhas, L. T.; Toney, M. F.; Heinemann, M. D.; Chua, D.; Gordon, R. G.; Wright, J.; Segre, C. U.; Perkins, J. D.

doi:10.1063/1.4938123

Title: Dopant activation in Sn-doped Ga{sub 2}O{sub 3} investigated by X-ray absorption spectroscopy

Journal Article · Mon Dec 21 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4938123· OSTI ID:22486270

Brandt, R. E.; Jaramillo, R.; Lim, K. ^[1]; Schelhas, L. T.; Toney, M. F. ^[1]; Heinemann, M. D. ^[2]; Chua, D.; Gordon, R. G. ^[3]; Wright, J.; Segre, C. U. ^[4]; Perkins, J. D. ^[5]

SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)
PVcomB, Helmholtz-Zentrum Berlin, 12489 Berlin (Germany)
Department of Chemistry Materials Science and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States)
Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 60616 (United States)
National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga{sub 2}O{sub 3}:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga{sub 2}O{sub 3}:Sn grown using edge-defined film-fed growth at 1725 °C is compared with amorphous Ga{sub 2}O{sub 3}:Sn films deposited at low temperature (<300 °C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal β-Ga{sub 2}O{sub 3}:Sn are present as Sn{sup 4+}, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga{sub 2}O{sub 3}:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga{sub 2}O{sub 3}:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation.

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OSTI ID:: 22486270

Journal Information:: Applied Physics Letters, Vol. 107, Issue 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951

Country of Publication:: United States

Language:: English

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