Gate tuneable beamsplitter in ballistic graphene

Journal Article · Mon Dec 21 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4938073· OSTI ID:22486265

Rickhaus, Peter; Makk, Péter; Schönenberger, Christian ^[1]; Liu, Ming-Hao; Richter, Klaus ^[2]

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1. Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)
2. Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg (Germany)

We present a beam splitter in a suspended, ballistic, multiterminal, bilayer graphene device. By using local bottomgates, a p-n interface tilted with respect to the current direction can be formed. We show that the p-n interface acts as a semi-transparent mirror in the bipolar regime and that the reflectance and transmittance of the p-n interface can be tuned by the gate voltages. Moreover, by studying the conductance features appearing in magnetic field, we demonstrate that the position of the p-n interface can be moved by 1 μm. The herein presented beamsplitter device can form the basis of electron-optic interferometers in graphene.

• OSTI ID: 22486265
• Journal Information: Applied Physics Letters, Vol. 107, Issue 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BEAMS
ELECTRIC POTENTIAL
GRAPHENE
INTERFACES
INTERFEROMETERS
LAYERS
MAGNETIC FIELDS
MIRRORS