Radiative recombination in GaN/InGaN heterojunction bipolar transistors

Kao, Tsung-Ting; Lee, Yi-Che; Kim, Hee-Jin; Ryou, Jae-Hyun; Kim, Jeomoh; Detchprohm, Theeradetch; Dupuis, Russell D.; Shen, Shyh-Chiang

doi:10.1063/1.4938147

Title: Radiative recombination in GaN/InGaN heterojunction bipolar transistors

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Abstract

We report an electroluminescence (EL) study on npn GaN/InGaN heterojunction bipolar transistors (HBTs). Three radiative recombination paths are resolved in the HBTs, corresponding to the band-to-band transition (3.3 eV), conduction-band-to-acceptor-level transition (3.15 eV), and yellow luminescence (YL) with the emission peak at 2.2 eV. We further study possible light emission paths by operating the HBTs under different biasing conditions. The band-to-band and the conduction-band-to-acceptor-level transitions mostly arise from the intrinsic base region, while a defect-related YL band could likely originate from the quasi-neutral base region of a GaN/InGaN HBT. The I{sub B}-dependent EL intensities for these three recombination paths are discussed. The results also show the radiative emission under the forward-active transistor mode operation is more effective than that using a diode-based emitter due to the enhanced excess electron concentration in the base region as increasing the collector current increases.

Authors:

Kao, Tsung-Ting; Lee, Yi-Che; Kim, Hee-Jin; Ryou, Jae-Hyun; Kim, Jeomoh; Detchprohm, Theeradetch; Dupuis, Russell D.; Shen, Shyh-Chiang ^[1]

Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States)

Publication Date:: Mon Dec 14 00:00:00 EST 2015

OSTI Identifier:: 22486235

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 107; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABUNDANCE; CURRENTS; ELECTROLUMINESCENCE; EV RANGE 01-10; GALLIUM NITRIDES; HETEROJUNCTIONS; PEAKS; RECOMBINATION; TRANSISTORS

Citation Formats


                    Kao, Tsung-Ting, Lee, Yi-Che, Kim, Hee-Jin, Ryou, Jae-Hyun, Kim, Jeomoh, Detchprohm, Theeradetch, Dupuis, Russell D., and Shen, Shyh-Chiang. Radiative recombination in GaN/InGaN heterojunction bipolar transistors.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4938147.

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                    Kao, Tsung-Ting, Lee, Yi-Che, Kim, Hee-Jin, Ryou, Jae-Hyun, Kim, Jeomoh, Detchprohm, Theeradetch, Dupuis, Russell D., & Shen, Shyh-Chiang. Radiative recombination in GaN/InGaN heterojunction bipolar transistors.  United States.  https://doi.org/10.1063/1.4938147

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                    Kao, Tsung-Ting, Lee, Yi-Che, Kim, Hee-Jin, Ryou, Jae-Hyun, Kim, Jeomoh, Detchprohm, Theeradetch, Dupuis, Russell D., and Shen, Shyh-Chiang. 2015.  
        "Radiative recombination in GaN/InGaN heterojunction bipolar transistors".  United States.  https://doi.org/10.1063/1.4938147.

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@article{osti_22486235,

  title        = {Radiative recombination in GaN/InGaN heterojunction bipolar transistors},

  author       = {Kao, Tsung-Ting and Lee, Yi-Che and Kim, Hee-Jin and Ryou, Jae-Hyun and Kim, Jeomoh and Detchprohm, Theeradetch and Dupuis, Russell D. and Shen, Shyh-Chiang},

  abstractNote = {We report an electroluminescence (EL) study on npn GaN/InGaN heterojunction bipolar transistors (HBTs). Three radiative recombination paths are resolved in the HBTs, corresponding to the band-to-band transition (3.3 eV), conduction-band-to-acceptor-level transition (3.15 eV), and yellow luminescence (YL) with the emission peak at 2.2 eV. We further study possible light emission paths by operating the HBTs under different biasing conditions. The band-to-band and the conduction-band-to-acceptor-level transitions mostly arise from the intrinsic base region, while a defect-related YL band could likely originate from the quasi-neutral base region of a GaN/InGaN HBT. The I{sub B}-dependent EL intensities for these three recombination paths are discussed. The results also show the radiative emission under the forward-active transistor mode operation is more effective than that using a diode-based emitter due to the enhanced excess electron concentration in the base region as increasing the collector current increases.},

  doi          = {10.1063/1.4938147},

  url          = {https://www.osti.gov/biblio/22486235},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 24,

  volume       = 107,

  place        = {United States},

  year         = {Mon Dec 14 00:00:00 EST 2015},

  month        = {Mon Dec 14 00:00:00 EST 2015}

}

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