Electronic and magnetic phenomena at the interface of LaAlO{sub 3} and Ru doped SrTiO{sub 3}

Journal Article · Mon Dec 14 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4938133· OSTI ID:22486229

Sanders, T. D.; Suzuki, Y. ^[1]; Jenkins, C. A.; Shafer, P.; Arenholz, E. ^[2]

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1. Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States)
2. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

We have investigated the effect of Ru doping the SrTiO{sub 3} (STO) side of the LaAlO{sub 3}/STO (LAO/STO) interface. The metallic behavior at the interface is remarkably robust to defects and disorder. Despite spin moment contribution from Ru ions, we see no evidence of magnetic ordering at the Ti L{sub 3},{sub 2} edge in either doped or undoped interfaces using X-ray magnetic circular dichroism. Magnetotransport measurements also do not show any evidence of magnetic scattering beyond that observed in undoped LAO/STO interfaces. Insertion of more than 7 unit cells of Ru doped STO at the interface suppresses metallic conductivity with a surprisingly sharp metal insulator transition. A similar metal-insulator transition is observed when a homoepitaxial STO film is grown on the single crystal substrate before LAO deposition. Together, our results indicate that ferromagnetism is not intrinsic to the interface, magnetic Ru dopants are not significant sources of scattering, and that cation vacancy formation alone cannot explain the insulating behavior observed in thick homoepitaxial LAO/STO/STO bilayers.

• OSTI ID: 22486229
• Journal Information: Applied Physics Letters, Vol. 107, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINATES
CATIONS
DEPOSITION
DOPED MATERIALS
FERROMAGNETISM
FILMS
INTERFACES
LANTHANUM OXIDES
LAYERS
MAGNETIC CIRCULAR DICHROISM
MAGNETIZATION
MONOCRYSTALS
PHASE TRANSFORMATIONS
RUTHENIUM IONS
SCATTERING
SPIN
STRONTIUM TITANATES
SUBSTRATES
VACANCIES
X RADIATION