Charge sensing of a few-donor double quantum dot in silicon
We demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography. We show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions. We demonstrate that we can control the tunnel times of the second dot to the SET island by ∼4 orders of magnitude by detuning its energy with respect to the first dot.
- OSTI ID:
- 22486213
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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