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Title: Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors

Abstract

Al{sub 0.4}Ga{sub 0.6}N/Al{sub 0.65}Ga{sub 0.35}N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10{sup 3} was obtained at 6 V bias.

Authors:
; ; ; ; ;  [1];  [2];  [2]
  1. School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
  2. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China)
Publication Date:
OSTI Identifier:
22486208
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; ORGANOMETALLIC COMPOUNDS; PHOTOTRANSISTORS; SAPPHIRE; SUBSTRATES; SURFACTANTS

Citation Formats

Zhang, Lingxia, Tang, Shaoji, Liu, Changshan, Li, Bin, Wu, Hualong, Wang, Hailong, Wu, Zhisheng, Jiang, Hao, and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275. Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors. United States: N. p., 2015. Web. doi:10.1063/1.4937389.
Zhang, Lingxia, Tang, Shaoji, Liu, Changshan, Li, Bin, Wu, Hualong, Wang, Hailong, Wu, Zhisheng, Jiang, Hao, & School of Microelectronics, Sun Yat-sen University, Guangzhou 510275. Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors. United States. https://doi.org/10.1063/1.4937389
Zhang, Lingxia, Tang, Shaoji, Liu, Changshan, Li, Bin, Wu, Hualong, Wang, Hailong, Wu, Zhisheng, Jiang, Hao, and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275. 2015. "Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors". United States. https://doi.org/10.1063/1.4937389.
@article{osti_22486208,
title = {Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors},
author = {Zhang, Lingxia and Tang, Shaoji and Liu, Changshan and Li, Bin and Wu, Hualong and Wang, Hailong and Wu, Zhisheng and Jiang, Hao and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275},
abstractNote = {Al{sub 0.4}Ga{sub 0.6}N/Al{sub 0.65}Ga{sub 0.35}N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10{sup 3} was obtained at 6 V bias.},
doi = {10.1063/1.4937389},
url = {https://www.osti.gov/biblio/22486208}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 107,
place = {United States},
year = {Mon Dec 07 00:00:00 EST 2015},
month = {Mon Dec 07 00:00:00 EST 2015}
}