Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors

Journal Article · Mon Dec 07 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4937389· OSTI ID:22486208

Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong ^[1]; Wu, Zhisheng ^[2]; Jiang, Hao ^[2]

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1. School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
2. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China)

Al{sub 0.4}Ga{sub 0.6}N/Al{sub 0.65}Ga{sub 0.35}N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10{sup 3} was obtained at 6 V bias.

• OSTI ID: 22486208
• Journal Information: Applied Physics Letters, Vol. 107, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
HETEROJUNCTIONS
ORGANOMETALLIC COMPOUNDS
PHOTOTRANSISTORS
SAPPHIRE
SUBSTRATES
SURFACTANTS