Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature

Aireddy, H.; Bhaumik, S.

doi:10.1063/1.4937391

Title: Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature

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Abstract

We have fabricated Fe{sub 3}O{sub 4}/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p{sup ++}) semiconducting nature of Fe{sub 3}O{sub 4}, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices.

Authors:: Aireddy, H.; Bhaumik, S.

Publication Date:: Mon Dec 07 00:00:00 EST 2015

OSTI Identifier:: 22486196

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONNECTORS; DOPED MATERIALS; ELECTRIC CONTACTS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY BEAM DEPOSITION; FERRITES; HETEROJUNCTIONS; IRON OXIDES; LASER RADIATION; MAGNETITE; MAGNETORESISTANCE; PHOSPHORUS IONS; PULSED IRRADIATION; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K

Citation Formats


                    Aireddy, H., Bhaumik, S., and Das, A. K., E-mail: amal@phy.iitkgp.ernet.in. Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4937391.

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                    Aireddy, H., Bhaumik, S., & Das, A. K., E-mail: amal@phy.iitkgp.ernet.in. Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature.  United States.  https://doi.org/10.1063/1.4937391

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                    Aireddy, H., Bhaumik, S., and Das, A. K., E-mail: amal@phy.iitkgp.ernet.in. 2015.  
        "Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature".  United States.  https://doi.org/10.1063/1.4937391.

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@article{osti_22486196,

  title        = {Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature},

  author       = {Aireddy, H. and Bhaumik, S. and Das, A. K., E-mail: amal@phy.iitkgp.ernet.in},

  abstractNote = {We have fabricated Fe{sub 3}O{sub 4}/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p{sup ++}) semiconducting nature of Fe{sub 3}O{sub 4}, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices.},

  doi          = {10.1063/1.4937391},

  url          = {https://www.osti.gov/biblio/22486196},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 23,

  volume       = 107,

  place        = {United States},

  year         = {Mon Dec 07 00:00:00 EST 2015},

  month        = {Mon Dec 07 00:00:00 EST 2015}

}

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