High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Journal Article · Mon Dec 07 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4936891· OSTI ID:22486187

Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick ^[1]; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep ^[1]; Bader, Samuel ^[2]

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1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
2. Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

• OSTI ID: 22486187
• Journal Information: Applied Physics Letters, Vol. 107, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BREAKDOWN
DISLOCATIONS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
GALLIUM NITRIDES
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PEAKS
PERFORMANCE
SUBSTRATES