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Title: Towards monomaterial p-n junctions: Single-step fabrication of tin oxide films and their non-destructive characterisation by angle-dependent X-ray photoelectron spectroscopy

The application of a non-destructive method for characterization of electronic structure of an ultra-thin SnO{sub 1
Authors:
 [1] ;  [2] ; ;  [1]
  1. Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf (Germany)
  2. (Poland)
Publication Date:
OSTI Identifier:
22486178
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; ENERGY LEVELS; FABRICATION; FILMS; LAYERS; P-N JUNCTIONS; SILICON OXIDES; SPIN-ON COATING; TIN OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY