Imaging interfacial electrical transport in graphene–MoS{sub 2} heterostructures with electron-beam-induced-currents
- Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States)
- Center for Electron Microscopy and Microanalysis, University of Southern California, Los Angeles, California 90089 (United States)
Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS{sub 2} heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrent collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.
- OSTI ID:
- 22486164
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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