Ultralow bias power all-optical photonic crystal memory realized with systematically tuned L3 nanocavity

Journal Article · Mon Nov 30 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4936372· OSTI ID:22486141

Kuramochi, Eiichi; Nozaki, Kengo; Shinya, Akihiko; Taniyama, Hideaki; Notomi, Masaya ^[1]; Takeda, Koji; Matsuo, Shinji ^[1]; Sato, Tomonari ^[1]

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1. NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

An InP photonic crystal nanocavity with an embedded InGaAsP active region is a unique technology that has realized an all-optical memory with a sub-micro-watt operating power and limitless storage time. In this study, we employed an L3 design with systematic multi-hole tuning, which realized a higher loaded Q factor (>40 000) and a lower mode volume (0.9 μm{sup 3}) than a line-defect-based buried-heterostructure nanocavity (16 000 and 2.2 μm{sup 3}). Excluding the active region realized a record loaded Q factor (210 000) in all for InP-based nanocavities. The minimum bias power for bistable memory operation was reduced to 2.3 ± 0.3 nW, which is about 1/10 of the previous record of 30 nW. This work further established the capability of a bistable nanocavity memory for use in future ultralow-power-consumption on-chip integrated photonics.

• OSTI ID: 22486141
• Journal Information: Applied Physics Letters, Vol. 107, Issue 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTALS
DESIGN
HOLES
INDIUM PHOSPHIDES
LINE DEFECTS
NANOSTRUCTURES
OPERATION
STORAGE
TUNING