Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride

Journal Article · Mon Nov 16 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4936191· OSTI ID:22486100

Koley, Goutam ^[1]; Glavin, Nicholas ^[2]; Singh, Amol ^[3]; Naguy, Rachel; Jespersen, Michael; Voevodin, Andrey ^[2]

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1. Department of Electrical and Computer Engineering and Advanced Materials Research Laboratory, Clemson University, Clemson, South Carolina 29634 (United States)
2. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)
3. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States)

Low temperature pulsed laser deposited (PLD) ultrathin boron nitride (BN) on SiO{sub 2} was investigated as a dielectric for graphene electronics, and a significant enhancement in electrical transport properties of graphene/PLD BN compared to graphene/SiO{sub 2} has been observed. Graphene synthesized by chemical vapor deposition and transferred on PLD deposited and annealed BN exhibited up to three times higher field effect mobility compared to graphene on the SiO{sub 2} substrate. Graphene field effect transistor devices fabricated on 5 nm BN/SiO{sub 2} (300 nm) yielded maximum hole and electron mobility of 4980 and 4200 cm{sup 2}/V s, respectively. In addition, significant improvement in carrier homogeneity and reduction in extrinsic doping in graphene on BN has been observed. An average Dirac point of 3.5 V and residual carrier concentration of 7.65 × 10{sup 11 }cm{sup −2} was observed for graphene transferred on 5 nm BN at ambient condition. The overall performance improvement on PLD BN can be attributed to dielectric screening of charged impurities, similar crystal structure and phonon modes, and reduced substrate induced doping.

• OSTI ID: 22486100
• Journal Information: Applied Physics Letters, Vol. 107, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
BORON NITRIDES
CARRIERS
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
DEPOSITS
DIELECTRIC MATERIALS
ELECTRON MOBILITY
ENERGY BEAM DEPOSITION
FIELD EFFECT TRANSISTORS
GRAPHENE
LASER RADIATION
LASERS
PHONONS
PULSED IRRADIATION
PULSES
SILICON OXIDES
SUBSTRATES