Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon
- IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany)
- Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany)
- SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany)
We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.
- OSTI ID:
- 22486088
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Integration of (208) oriented epitaxial Hf-doped Bi{sub 4}Ti{sub 3}O{sub 12} with (0002) GaN using SrTiO{sub 3}/TiO{sub 2} buffer layer
Novel process for low-cost large-area GaN templates on metal foils SBIR Project Phase InFinal Report
Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts
Journal Article
·
Fri May 15 00:00:00 EDT 2009
· Journal of Applied Physics
·
OSTI ID:22486088
+2 more
Novel process for low-cost large-area GaN templates on metal foils SBIR Project Phase InFinal Report
Technical Report
·
Mon Dec 04 00:00:00 EST 2017
·
OSTI ID:22486088
Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts
Journal Article
·
Thu Aug 28 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22486088
+5 more
Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BUFFERS
CRYSTAL DEFECTS
EV RANGE 01-10
FILMS
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PLASMA
RAMAN SPECTROSCOPY
SCANDIUM NITRIDES
SCANDIUM OXIDES
SILICON
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
YTTRIUM OXIDES
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BUFFERS
CRYSTAL DEFECTS
EV RANGE 01-10
FILMS
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PLASMA
RAMAN SPECTROSCOPY
SCANDIUM NITRIDES
SCANDIUM OXIDES
SILICON
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
YTTRIUM OXIDES