Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

Journal Article · Mon Nov 16 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4935856· OSTI ID:22486088

Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G. ^[1]; Niermann, T.; Lehmann, M. ^[2]; Thapa, S. B.; Haeberlen, M.; Storck, P. ^[3]; Schroeder, T. ^[1]

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1. IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany)
2. Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany)
3. SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany)

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

• OSTI ID: 22486088
• Journal Information: Applied Physics Letters, Vol. 107, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BUFFERS
CRYSTAL DEFECTS
EV RANGE 01-10
FILMS
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PLASMA
RAMAN SPECTROSCOPY
SCANDIUM NITRIDES
SCANDIUM OXIDES
SILICON
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
YTTRIUM OXIDES