Quantum capacitance of graphene in contact with metal
- The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto M5S 1A1 (Canada)
We report a versatile computation method to quantitatively determine the quantum capacitance of graphene when it is in contact with metal. Our results bridge the longstanding gap between the theoretically predicted and experimentally measured quantum capacitance of graphene. Contrary to popular assumptions, the presence of charged impurities or structural distortions of graphene are not the only sources of the asymmetric capacitance with respect to the polarity of the bias potential and the higher-than-expected capacitance at the Dirac point. They also originate from the field-induced electronic interactions between graphene and metal. We also provide an improved model representation of a metal–graphene junction.
- OSTI ID:
- 22486070
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Analytical carrier density and quantum capacitance for graphene
Frequency-dependent quantum capacitance and plasma wave in monolayer transition metal dichalcogenides