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Title: Carrier and photon dynamics in a topological insulator Bi{sub 2}Te{sub 3}/GaN type II staggered heterostructure

Abstract

We have demonstrated a type-II band-aligned heterostructure between pulsed laser deposited topological insulator bismuth telluride and metal organic-chemical-vapour deposited GaN on a sapphire substrate. The heterostructure shows a large valence band-offset of 3.27 eV as determined from x-ray photoelectron spectroscopy, which is close to the bandgap of GaN (3.4 eV). Further investigation using x-ray diffraction, Raman spectroscopy, and energy-dispersive x-ray spectrum reveals the stoichiometric and material properties of bismuth telluride on GaN. Steady state photon emission from GaN is found to be modulated by the charge transfer process due to diffusion across the junction. The time constant involved with the charge transfer process is found to be 0.6 ns by transient absorption spectroscopy. The heterostructure can be used for designing devices with different functionalities and improving the performance of the existing devices on GaN.

Authors:
; ; ;
Publication Date:
OSTI Identifier:
22486048
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION SPECTROSCOPY; BISMUTH TELLURIDES; CARRIERS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; ORGANOMETALLIC COMPOUNDS; PHOTON EMISSION; PHOTONS; RAMAN SPECTROSCOPY; SAPPHIRE; TOPOLOGY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTRA

Citation Formats

Chaturvedi, P., Chouksey, S., Banerjee, D., Ganguly, S., and Saha, D., E-mail: dipankarsaha@iitb.ac.in. Carrier and photon dynamics in a topological insulator Bi{sub 2}Te{sub 3}/GaN type II staggered heterostructure. United States: N. p., 2015. Web. doi:10.1063/1.4935554.
Chaturvedi, P., Chouksey, S., Banerjee, D., Ganguly, S., & Saha, D., E-mail: dipankarsaha@iitb.ac.in. Carrier and photon dynamics in a topological insulator Bi{sub 2}Te{sub 3}/GaN type II staggered heterostructure. United States. https://doi.org/10.1063/1.4935554
Chaturvedi, P., Chouksey, S., Banerjee, D., Ganguly, S., and Saha, D., E-mail: dipankarsaha@iitb.ac.in. 2015. "Carrier and photon dynamics in a topological insulator Bi{sub 2}Te{sub 3}/GaN type II staggered heterostructure". United States. https://doi.org/10.1063/1.4935554.
@article{osti_22486048,
title = {Carrier and photon dynamics in a topological insulator Bi{sub 2}Te{sub 3}/GaN type II staggered heterostructure},
author = {Chaturvedi, P. and Chouksey, S. and Banerjee, D. and Ganguly, S. and Saha, D., E-mail: dipankarsaha@iitb.ac.in},
abstractNote = {We have demonstrated a type-II band-aligned heterostructure between pulsed laser deposited topological insulator bismuth telluride and metal organic-chemical-vapour deposited GaN on a sapphire substrate. The heterostructure shows a large valence band-offset of 3.27 eV as determined from x-ray photoelectron spectroscopy, which is close to the bandgap of GaN (3.4 eV). Further investigation using x-ray diffraction, Raman spectroscopy, and energy-dispersive x-ray spectrum reveals the stoichiometric and material properties of bismuth telluride on GaN. Steady state photon emission from GaN is found to be modulated by the charge transfer process due to diffusion across the junction. The time constant involved with the charge transfer process is found to be 0.6 ns by transient absorption spectroscopy. The heterostructure can be used for designing devices with different functionalities and improving the performance of the existing devices on GaN.},
doi = {10.1063/1.4935554},
url = {https://www.osti.gov/biblio/22486048}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 107,
place = {United States},
year = {Mon Nov 09 00:00:00 EST 2015},
month = {Mon Nov 09 00:00:00 EST 2015}
}