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Title: Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

Abstract

Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly contrasted SCM signals were obtained between the ZnO layers with different Ga densities. Through comparison with dopant depth profiles from secondary ion mass spectroscopy measurement, it is demonstrated that SCM is able to distinguish carrier concentrations at all levels of the samples (from 2 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3}). The good agreement of the results from the two techniques indicates that SCM can be a useful tool for two dimensional carrier profiling at nanoscale for ZnO nanostructure development. As an example, residual carrier concentration inside the non-intentionally doped buffer layer was estimated to be around 2 × 10{sup 16 }cm{sup −3} through calibration analysis.

Authors:
;  [1];  [2]; ;  [3]
  1. Institut des Nanotechnologies de Lyon (INL), Université de Lyon, CNRS UMR 5270, INSA Lyon, 7 Avenue Jean Capelle, 69621 Villeurbanne (France)
  2. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS UPR10, rue Bernard Grégory, 06560 Valbonne Sophia Antipolis (France)
  3. Groupe d'étude de la matière condensée (GEMaC), CNRS - Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats Unis, 78035 Versailles (France)
Publication Date:
OSTI Identifier:
22486046
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CALIBRATION; CAPACITANCE; CARRIERS; DOPED MATERIALS; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SIGNALS; ZINC OXIDES

Citation Formats

Wang, L., E-mail: lin.wang@insa-lyon.fr, Laurent, J., Brémond, G., Chauveau, J. M., Physics Department, University of Nice Sophia Antipolis, Sallet, V., and Jomard, F. Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy. United States: N. p., 2015. Web. doi:10.1063/1.4935349.
Wang, L., E-mail: lin.wang@insa-lyon.fr, Laurent, J., Brémond, G., Chauveau, J. M., Physics Department, University of Nice Sophia Antipolis, Sallet, V., & Jomard, F. Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy. United States. https://doi.org/10.1063/1.4935349
Wang, L., E-mail: lin.wang@insa-lyon.fr, Laurent, J., Brémond, G., Chauveau, J. M., Physics Department, University of Nice Sophia Antipolis, Sallet, V., and Jomard, F. 2015. "Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy". United States. https://doi.org/10.1063/1.4935349.
@article{osti_22486046,
title = {Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy},
author = {Wang, L., E-mail: lin.wang@insa-lyon.fr and Laurent, J. and Brémond, G. and Chauveau, J. M. and Physics Department, University of Nice Sophia Antipolis and Sallet, V. and Jomard, F.},
abstractNote = {Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly contrasted SCM signals were obtained between the ZnO layers with different Ga densities. Through comparison with dopant depth profiles from secondary ion mass spectroscopy measurement, it is demonstrated that SCM is able to distinguish carrier concentrations at all levels of the samples (from 2 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3}). The good agreement of the results from the two techniques indicates that SCM can be a useful tool for two dimensional carrier profiling at nanoscale for ZnO nanostructure development. As an example, residual carrier concentration inside the non-intentionally doped buffer layer was estimated to be around 2 × 10{sup 16 }cm{sup −3} through calibration analysis.},
doi = {10.1063/1.4935349},
url = {https://www.osti.gov/biblio/22486046}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 107,
place = {United States},
year = {Mon Nov 09 00:00:00 EST 2015},
month = {Mon Nov 09 00:00:00 EST 2015}
}