Two-color detection with charge sensitive infrared phototransistors

Journal Article · Mon Nov 02 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4935256· OSTI ID:22485993

Kim, Sunmi; Kajihara, Yusuke ^[1]; Komiyama, Susumu ^[2]; Ueda, Takeji ^[2]; Satoh, Takashi ^[1]

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1. Institute of Industrial Science, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153-8505 (Japan)
2. Department of Basic Science, The University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902 (Japan)

Highly sensitive two-color detection is demonstrated at wavelengths of 9 μm and 14.5 μm by using a charge sensitive infrared phototransistor fabricated in a triple GaAs/AlGaAs quantum well (QW) crystal. Two differently thick QWs (7 nm- and 9 nm-thicknesses) serve as photosensitive floating gates for the respective wavelengths via intersubband excitation: The excitation in the QWs is sensed by a third QW, which works as a conducting source-drain channel in the photosensitive transistor. The two spectral bands of detection are shown to be controlled by front-gate biasing, providing a hint for implementing voltage tunable ultra-highly sensitive detectors.

• OSTI ID: 22485993
• Journal Information: Applied Physics Letters, Vol. 107, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
COLOR
CRYSTALS
DETECTION
ELECTRIC POTENTIAL
EXCITATION
GALLIUM ARSENIDES
PHOTOTRANSISTORS
QUANTUM WELLS
THICKNESS
WAVELENGTHS