Band alignment of atomic layer deposited (HfZrO{sub 4}){sub 1−x}(SiO{sub 2}){sub x} gate dielectrics on Si (100)
- Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678 (Korea, Republic of)
- Department of Physics, Hasanuddin University, Makassar 90245 (Indonesia)
- College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 16419 (Korea, Republic of)
The band alignment of atomic layer deposited (HfZrO{sub 4}){sub 1−x}(SiO{sub 2}){sub x} (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence band offset, and conduction band offset values for HfZrO{sub 4} silicate increased from 5.4 eV to 5.8 eV, from 2.5 eV to 2.75 eV, and from 1.78 eV to 1.93 eV, respectively, as the mole fraction (x) of SiO{sub 2} increased from 0.1 to 0.2. This increase in the conduction band and valence band offsets, as a function of increasing SiO{sub 2} mole fraction, decreased the gate leakage current density. As a result, HfZrO{sub 4} silicate thin films were found to be better for advanced gate stack applications because they had adequate band gaps to ensure sufficient conduction band offsets and valence band offsets to Si.
- OSTI ID:
- 22485991
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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