Domain formation and polarization reversal under atomic force microscopy-tip voltages in ion-sliced LiNbO{sub 3} films on SiO{sub 2}/LiNbO{sub 3} substrates

Gainutdinov, R. V.; Volk, T. R.; Zhang, H. H.

doi:10.1063/1.4934186

Title: Domain formation and polarization reversal under atomic force microscopy-tip voltages in ion-sliced LiNbO{sub 3} films on SiO{sub 2}/LiNbO{sub 3} substrates

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Abstract

We report on studies on writing of micro- and nanodomains and specified domain patterns by AFM-tip voltages U{sub DC} in thin (0.5 μm thick) ion-sliced LiNbO{sub 3} films embedded to SiO{sub 2}/LiNbO{sub 3} substrates. A peculiar feature is an overlapping of domains as the distance between them decreases. Piezoelectric hysteresis loops were measured in a wide range of U{sub DC} pulse durations. Domain dynamics and characteristics of hysteresis loops reveal marked distinctions from those observed so far in LiNbO{sub 3} films and bulk crystals.

Authors:

Gainutdinov, R. V.; Volk, T. R. ^[1]; Zhang, H. H. ^[2]

Shubnikov Institute of Crystallography RAS, 119333 Moscow (Russian Federation)
Jinan Jingzheng Electronics Co., Ltd., 250101 Jinan (China)

Publication Date:: Mon Oct 19 00:00:00 EDT 2015

OSTI Identifier:: 22485940

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 107; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMIC FORCE MICROSCOPY; CRYSTALS; ELECTRIC POTENTIAL; FILMS; HYSTERESIS; LITHIUM COMPOUNDS; NIOBATES; NIOBIUM OXIDES; PIEZOELECTRICITY; POLARIZATION; PULSES; SILICA; SILICON OXIDES; SUBSTRATES

Citation Formats


                    Gainutdinov, R. V., Volk, T. R., and Zhang, H. H. Domain formation and polarization reversal under atomic force microscopy-tip voltages in ion-sliced LiNbO{sub 3} films on SiO{sub 2}/LiNbO{sub 3} substrates.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4934186.

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                    Gainutdinov, R. V., Volk, T. R., & Zhang, H. H. Domain formation and polarization reversal under atomic force microscopy-tip voltages in ion-sliced LiNbO{sub 3} films on SiO{sub 2}/LiNbO{sub 3} substrates.  United States.  https://doi.org/10.1063/1.4934186

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                    Gainutdinov, R. V., Volk, T. R., and Zhang, H. H. 2015.  
        "Domain formation and polarization reversal under atomic force microscopy-tip voltages in ion-sliced LiNbO{sub 3} films on SiO{sub 2}/LiNbO{sub 3} substrates".  United States.  https://doi.org/10.1063/1.4934186.

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@article{osti_22485940,

  title        = {Domain formation and polarization reversal under atomic force microscopy-tip voltages in ion-sliced LiNbO{sub 3} films on SiO{sub 2}/LiNbO{sub 3} substrates},

  author       = {Gainutdinov, R. V. and Volk, T. R. and Zhang, H. H.},

  abstractNote = {We report on studies on writing of micro- and nanodomains and specified domain patterns by AFM-tip voltages U{sub DC} in thin (0.5 μm thick) ion-sliced LiNbO{sub 3} films embedded to SiO{sub 2}/LiNbO{sub 3} substrates. A peculiar feature is an overlapping of domains as the distance between them decreases. Piezoelectric hysteresis loops were measured in a wide range of U{sub DC} pulse durations. Domain dynamics and characteristics of hysteresis loops reveal marked distinctions from those observed so far in LiNbO{sub 3} films and bulk crystals.},

  doi          = {10.1063/1.4934186},

  url          = {https://www.osti.gov/biblio/22485940},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 16,

  volume       = 107,

  place        = {United States},

  year         = {Mon Oct 19 00:00:00 EDT 2015},

  month        = {Mon Oct 19 00:00:00 EDT 2015}

}

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