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Title: Surface participation and dielectric loss in superconducting qubits

We study the energy relaxation times (T{sub 1}) of superconducting transmon qubits in 3D cavities as a function of dielectric participation ratios of material surfaces. This surface participation ratio, representing the fraction of electric field energy stored in a dissipative surface layer, is computed by a two-step finite-element simulation and experimentally varied by qubit geometry. With a clean electromagnetic environment and suppressed non-equilibrium quasiparticle density, we find an approximately proportional relation between the transmon relaxation rates and surface participation ratios. These results suggest dielectric dissipation arising from material interfaces is the major limiting factor for the T{sub 1} of transmons in 3D circuit quantum electrodynamics architecture. Our analysis also supports the notion of spatial discreteness of surface dielectric dissipation.
Authors:
; ; ; ; ; ; ;  [1]
  1. Department of Applied Physics and Physics, Yale University, New Haven, Connecticut 06520 (United States)
Publication Date:
OSTI Identifier:
22485936
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; FINITE ELEMENT METHOD; INTERFACES; LAYERS; QUANTUM ELECTRODYNAMICS; QUBITS; RELAXATION; SIMULATION; SURFACES