Chemical environment of rare earth ions in Ge{sub 28.125}Ga{sub 6.25}S{sub 65.625} glass-ceramics doped with Dy{sup 3+}
- Centre for Ultrahigh bandwidth Devices for Optical Systems, Laser Physics Centre, Research School of Physics and Engineering, The Australian National University, Canberra ACT 2600 (Australia)
- Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China)
- Laboratory of Infrared Material and Devices, The Advanced Technology Research Institute, Ningbo University, Ningbo 315211 (China)
- Faculty of Chemistry and Material Engineering, Wenzhou University, Wenzhou 325027 (China)
We have annealed Ge{sub 28.125}Ga{sub 6.25}S{sub 65.625} glasses doped with 0.5% Dy to create glass-ceramics in order to examine the local chemical environment of the rare earth ions (REI). More than 12 times enhancement of the emission at 2.9 and 3.5 μm was achieved in glass-ceramics produced using prolonged annealing time. Elemental mapping showed clear evidence that Ga{sub 2}S{sub 3} crystalline grains with a size of 50 nm were dispersed in a Ge-S glass matrix in the glass-ceramics, and the REI could only be found near the Ga{sub 2}S{sub 3} crystalline grains. From the unchanged lineshape of the emissions at 2.9 and 3.5 μm and lack of splitting of the absorption peaks, we concluded that the REI were bonded to Ga on the surface of the Ga{sub 2}S{sub 3} crystals.
- OSTI ID:
- 22485929
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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