Electric field modulation of Schottky barrier height in graphene/MoSe{sub 2} van der Waals heterointerface

Journal Article · Mon Jul 13 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926973· OSTI ID:22483198

Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto ^[1]; Masubuchi, Satoru; Machida, Tomoki ^[1]

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1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)

We demonstrate a vertical field-effect transistor based on a graphene/MoSe{sub 2} van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe{sub 2} exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe{sub 2} vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10{sup 5}. These results point to the potential high performance of the graphene/MoSe{sub 2} vdW heterostructure for electronics applications.

• OSTI ID: 22483198
• Journal Information: Applied Physics Letters, Vol. 107, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DENSITY OF STATES
ELECTRIC FIELDS
FERMI LEVEL
GRAPHENE
INTERFACES
MODULATION
MOLYBDENUM SELENIDES
PERFORMANCE
POTENTIALS